IRF7807D1 - MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRF7807D1
Manufacturer	International Rectifier (now Infineon)
File Size	165.81 KB
Description	MOSFET
Datasheet	IRF7807D1 Datasheet

General Description

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Overview

PD- 93761 IRF7807D1 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low.

Key Features

(Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.
RθJA Max. 50 Units °C/W www. irf. com 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
Static Drain-Source on Resistance.
Drain-Source Leakage Current.
V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A VDS.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRF7807D1PBF	HEXFET Power MOSFET
IRF7807D2	MOSFET
IRF7807D2PbF	MOSFET / SCHOTTKY DIODE
IRF7807	N-Channel Power MOSFET
IRF7807A	N-Channel Power MOSFET
IRF7807APbF	HEXFET Chip-Set for DC-DC Converters
IRF7807APbF-1	HEXFET Chip-Set for DC-DC Converters
IRF7807ATRPbF-1	HEXFET Chip-Set for DC-DC Converters
IRF7807PbF	HEXFET Chip-Set for DC-DC Converters
IRF7807PbF-1	HEXFET Chip-Set for DC-DC Converters