Description
The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.
Features
- (Max Values)
IRF7807D1
VDS RDS(on) Qg Qsw Qoss
30V 25mΩ 14nC 5.2nC 18.4nC
Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.
- RθJA
Max. 50
Units °C/W
www. irf. com
1
11/8/99
IRF7807D1
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
- Static Drain-Source on Resistance.
- Drain-Source Leakage Current.
- V(BR)DSS RDS(on) 1.0 90 7.2
Min 30
Typ
Max
Units V
Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A VDS.
IRF7807D1 Datasheet
