0.01 0.1 1 10 10 1 0.0001 t1 , Rectangular Pulse Duration (sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRF7807V.

This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IR.

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the .

IRF7807V

IRF7807VD1

IRF7807VD1PBF

IRF7807VD1PBF-1

IRF7807VD2

IRF7807VD2PbF

IRF7807VTRPBF-1

IRF7807

IRF7807A

IRF7807APbF

IRF7807APbF-1

IRF7807ATRPbF-1

IRF7807D1