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IRF7902PBF - HEXFET Power MOSFET

Features

  • VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m Ω) 60 ID = 6.4A 50 Fig 16. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m Ω) 40 ID = 9.7A 30 40 20 T J = 125°C 30 T J = 125°C 10 20 T J = 25°C 10 2 4 6 8 10 12 14 16 T J = 25°C 0 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) VGS, Gate -to -Source Voltage (V) Fig 17.

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www.DataSheet4U.com PD - 97194A IRF7902PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l Lead-Free VDSS 30V Q1 22.6m:@VGS = 10V Q2 14.4m:@VGS = 10V 9 T ÃÃ9! T ÃÃ9! T ÃÃ9! RDS(on) max ID 6.4A 9.7A B T! T! B! SO-8 Absolute Maximum Ratings Parameter VDS VGS I D @ TA = 25°C I D @ TA = 70°C I DM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q1 Max. 30 ± 20 6.4 5.1 51 1.4 0.9 0.
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