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IRF840LCL Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V G S RDS(on) = 0.85Ω ID = 8.

General Description

This new series of low charge HEXFET® power MOSFETs achieve significant lower gate charge over conventional MOSFETs.

Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings.

In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications.

Key Features

  • 0071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg. , 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR.

IRF840LCL Distributor