1 4 5 ) 0 .3 42 (.0 1 3 5 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3.

Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. These device improvements combi.

This new series of low charge HEXFET® power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, all.

IRF840LC

IRF840LCL

IRF840L

IRF840

IRF840A

IRF840AL

IRF840AS

IRF840B

IRF840FI

IRF840HPBF

IRF840I

IRF840P-HF-3

IRF840PBF