s(th) Qgodr Qgd Qgs2 Qgs1 Fig 17. Gate Charge Waveform Fig 17. Gate Charge Test Circuit V DS V GS RG RD VDS 90% D.U.T. + - V DD VGS Pulse Width ≤ 1 µs Duty Fac.

where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin .

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known fo.

IRF8010

IRF8010L

IRF8010LPBF

IRF8010PBF

IRF8010S

IRF8010SPBF

IRF8113

IRF8113GPbF

IRF8113PbF

IRF8113PBF-1

IRF820

IRF820A

IRF820AL