* more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching
IRF8915
International Rectifier
215.81 KB
Hexfetpower mosfet.
PD - 95858 IRF8915 HEXFET® Power MOSFET Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-t.
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