IRF9Z14S Datasheet - International Rectifier

Power MOSFET

IRF9Z14S General Description

l l D VDSS = -60V RDS(on) = 0.50Ω G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po.

IRF9Z14S Datasheet (361.79 KB)

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IRF9Z14S

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International Rectifier

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361.79 KB

Description:

Power mosfet.
PD - 9.911A IRF9Z14S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z14S) l Low-profile through-hole (IRF9Z14L) l 175°C Operat.

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IRF9Z14S Power MOSFET International Rectifier

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IRF9Z14S General Description

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