Gate Charge Test Circuit IRF9Z24N Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

l l D VDSS = -55V RDS(on) = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching.

IRF9Z24

IRF9Z24L

IRF9Z24NL

IRF9Z24NLPBF

IRF9Z24NPBF

IRF9Z24NS

IRF9Z24NSPbF

IRF9Z24S

IRF9Z20

IRF9Z22

IRF9Z10

IRF9Z14

IRF9Z14L