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IRF9Z34N Datasheet - International Rectifier

Power MOSFET

IRF9Z34N Features

* .5 5 5 ) 1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 ) 3X 1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 ) 0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M B A M 3X 0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 ) 2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN

IRF9Z34N General Description

l l D VDSS = -55V G S RDS(on) = 0.10Ω ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe.

IRF9Z34N Datasheet (108.25 KB)

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Datasheet Details

Part number:

IRF9Z34N

Manufacturer:

International Rectifier

File Size:

108.25 KB

Description:

Power mosfet.
PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channe.

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IRF9Z34N Power MOSFET International Rectifier

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