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IRF9Z34NS Datasheet - International Rectifier

Power MOSFET

IRF9Z34NS Features

* (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M B A M 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINI

IRF9Z34NS General Description

l l D VDSS = -55V RDS(on) = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow.

IRF9Z34NS Datasheet (162.30 KB)

Preview of IRF9Z34NS PDF

Datasheet Details

Part number:

IRF9Z34NS

Manufacturer:

International Rectifier

File Size:

162.30 KB

Description:

Power mosfet.
PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Ope.

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IRF9Z34NS Power MOSFET International Rectifier

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