IRFAG50 Datasheet - International Rectifier

N-Channel MOSFET

IRFAG50 Features

* Repetitive Avalanche Ratings

* Dynamic dv/dt Rating

* Hermetically Sealed

* Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drai

IRFAG50 General Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv.

IRFAG50 Datasheet (0.99 MB)

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Datasheet Details

Part number:

IRFAG50

Manufacturer:

International Rectifier

File Size:

0.99 MB

Description:

N-channel mosfet.
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRFAG50 1000V RDS(on) 2.0 ID 5..

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IRFAG50 N-Channel MOSFET International Rectifier

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IRFAG50 Features

IRFAG50 General Description

Datasheet Details

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