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IRFB3607PBF Key Features
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
G IRFB3607PbF IRFS3607PbF IRFSL3607PbF
HEXFET® Power MOSFET
D Bene
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability S VDSS RDS(on) typ. max. ID
D 75V 7.34m: 9.0m: 80A
D D G
Other IRFB3607PBF Datasheets
| Manufacturer |
Part Number |
Description |
Inchange Semiconductor |
IRFB3607
|
TO-220 N-Channel MOSFET |
|
Inchange Semiconductor |
IRFB3607
|
TO-262 N-Channel MOSFET |
