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IRFB4110PBF - HEXFET Power MOSFET

Features

  • tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs. Pulsewidth EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 1.0% Duty Cycle 200 ID = 108A 150 100 50 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as.

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IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l RoHS Compliant, Halogen-Free HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 100V 3.7mΩ c4.
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