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International Rectifier Electronic Components Datasheet

IRFB4321PBF Datasheet

Power MOSFET

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PD - 97103B
IRFB4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on)
ID
typ.
max.
D
G
S
HEXFET® Power MOSFET
150V
12m:
15m:
85A
D
S
D
G
TO-220AB
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case g
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient g
Max.
85 c
60
330
350
2.3
±30
120
-55 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.43
–––
62
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
www.irf.com
1
12/9/10


International Rectifier Electronic Components Datasheet

IRFB4321PBF Datasheet

Power MOSFET

No Preview Available !

IRFB4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
150
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
130
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
150
12
–––
–––
–––
–––
–––
0.8
Typ.
–––
71
24
21
18
60
25
35
4460
390
82
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
d––– mV/°C Reference to 25°C, ID = 1mA
f15 mΩ VGS = 10V, ID = 33A
5.0 V VDS = VGS, ID = 250μA
20 μA VDS = 150V, VGS = 0V
1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
––– Ω
Max. Units
Conditions
––– S VDS = 25V, ID = 50A
110 nC ID = 50A
f––– VDS = 75V
––– VGS = 10V
––– ns VDD = 98V
––– ID = 50A
f––– RG = 2.5Ω
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 85
A MOSFET symbol
––– ––– 330
showing the
A integral reverse
G
––– ––– 1.3
––– 89 130
––– 300 450
––– 6.5 –––
p-n junction diode.
fV TJ = 25°C, IS = 50A, VGS = 0V
ns ID = 50A
fnC VR = 128V,
A di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.095mH
RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use
above this value.
„ Pulse width 400μs; duty cycle 2%.
… Rθ is measured at TJ approximately 90°C
2 www.irf.com


Part Number IRFB4321PBF
Description Power MOSFET
Maker International Rectifier
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IRFB4321PBF Datasheet PDF






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