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International Rectifier Electronic Components Datasheet

IRFB4410Z Datasheet

Power MOSFET

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IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
100V
7.2m:
G
max. 9.0m:
S ID (Silicon Limited)
97A
D
D
D
DS
G
TO-220AB
IRFB4410ZPbF
DS
G
D2Pak
IRFS4410ZPbF
DS
G
TO-262
IRFSL4410ZPbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFB4410ZPbF
IRFSL4410ZPbF
IRFS4410ZPbF
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Tape and Reel Right
800
Orderable Part Number
IRFB4410ZPbF
IRFSL4410ZPbF
IRFS4410ZPbF
IRFS4410ZTRLPbF
IRFS4410ZTRRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
d Single Pulse Avalanche Energy
IAR
EAR
Avalanche Current
f Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
RθJA
Parameter
j Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
j Junction-to-Ambient, TO-220
ij Junction-to-Ambient (PCB Mount) , D2Pak
Max.
97
69
390
230
1.5
± 20
16
-55 to + 175
300
x x 10lb in (1.1N m)
242
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 25, 2014


International Rectifier Electronic Components Datasheet

IRFB4410Z Datasheet

Power MOSFET

No Preview Available !

IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
VGS(th)
Gate Threshold Voltage
2.0
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
RG
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
140
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Qg - Qgd)
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
g Effective Output Capacitance (Time Related)
–––
Typ.
–––
0.12
7.2
–––
–––
–––
–––
–––
0.70
Typ.
–––
83
19
27
56
16
52
43
57
4820
340
170
420
690
Max. Units
Conditions
–––
–––
9.0
V VGS = 0V, ID = 250μA
™ V/°C Reference to 25°C, ID = 5mA
f mΩ VGS = 10V, ID = 58A
4.0 V VDS = VGS, ID = 150μA
20 μA VDS = 100V, VGS = 0V
250
VDS = 80V, VGS = 0V, TJ = 125°C
100
-100
–––
nA VGS = 20V
VGS = -20V
Ω
Max. Units
Conditions
––– S VDS = 10V, ID = 58A
120 nC ID = 58A
–––
–––
VDS =50V
f VGS = 10V
f ID = 58A, VDS =0V, VGS = 10V
––– ns VDD = 65V
–––
ID = 58A
–––
–––
f RG =2.7Ω
VGS = 10V
––– pF VGS = 0V
–––
VDS = 50V
–––
ƒ = 1.0MHz, See Fig.5
–––
–––
h VGS = 0V, VDS = 0V to 80V , See Fig.11
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 97 A MOSFET symbol
D
showing the
––– ––– 390 A integral reverse
G
p-n junction diode.
S
f ––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V
––– 38 57 ns TJ = 25°C
VR = 85V,
––– 46 69
TJ = 125°C
––– 53 80 nC TJ = 25°C
f IF = 58A
di/dt = 100A/μs
––– 82 120
TJ = 125°C
––– 2.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD 58A, di/dt 610A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 25, 2014


Part Number IRFB4410Z
Description Power MOSFET
Maker International Rectifier
PDF Download

IRFB4410Z Datasheet PDF






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