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IRFB7545PBF - Power MOSFET

Features

  • idth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 1.0E-02 EAR , Avalanche Energy (mJ) 150 TOP Single Pulse BOTTOM 1.0% Duty Cycle 125 ID = 57A 100 75 50 25 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy.

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Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters  D G S Benefits  Improved gate, avalanche and dynamic dV/dt ruggedness  Fully characterized capacitance and avalanche SOA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoHS compliant G Gate StrongIRFET™ IRFB7545PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 60V 4.9m 5.
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