IRFB9N60 Datasheet - International Rectifier

Power MOSFET

IRFB9N60 Features

* (.55 5) 1 3.47 (.53 0) 4 .0 6 (.160 ) 3 .5 5 (.140 ) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.0 14 ) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O

IRFB9N60 General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation level.

IRFB9N60 Datasheet (135.44 KB)

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Datasheet Details

Part number:

IRFB9N60

Manufacturer:

International Rectifier

File Size:

135.44 KB

Description:

Power mosfet.
PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive R.

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IRFB9N60 Power MOSFET International Rectifier

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IRFB9N60 Features

IRFB9N60 General Description

Datasheet Details

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Description:

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