V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circu.

at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 con.

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-.

IRFB9N60A

IRFB9N65

IRFB9N65A

IRFB9N65APBF

IRFB9N30A

IRFB9N30APBF

IRFB11N50

IRFB11N50A

IRFB11N50APBF

IRFB13N50A

IRFB13N50APBF

IRFB16N50K

IRFB16N50KPbF