IRFB9N60A Description
IRFB9N60A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single 0.75.
IRFB9N60A Key Features
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/dt Available ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Material categorization: for definitions of pliance please see .vishay./doc?99912