IRFBA32N50K Description
Units Conditions D MOSFET symbol 32 showing the A G integral reverse 128 S p-n junction diode. 1.5 V TJ = 25°C, IS = 32A, VGS = 0V 650 ns TJ = 125°C, IF = 32A 9.0 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical SMPS Topologies l l l Hard Switching Full and Half Bridge Circuits Hard Switching Single Transistor Circuits Power Factor Correction Circuits .irf. 1 6/2/00...
IRFBA32N50K Key Features
- UninterruptIble Power Supply Benefits
- Low On-Resistance
- High Speed Switching
- Low Gate Drive Current Due to Improved Gate Charge Characteristics
- Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current
- VDSS 500V RDS(on) 0.14Ω ID 32A Super-220™