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IRFBA1404P - Power MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO247 package. The combination of extremely low on-resistance silicon an.

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PD - 93806 AUTOMOTIVE MOSFET Typical Applications l l l l l l l l l l l IRFBA1404P HEXFET® Power MOSFET D Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric Braking Radiator Fan Control Advanced Process Technology Ultra Low On-Resistance Increase Current Handling Capability 175°C Operating Temperature Fast Switching Dynamic dv/dt Rating Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 3.7mΩ Benefits G ID = 206A† S Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
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