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IRFBA1405PPBF - Power MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO-247 package. The combination of extremely low on-resistance silicon a.

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www.DataSheet4U.com AUTOMOTIVE MOSFET Typical Applications l l l l l l PD -95152 Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Lead-Free Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G IRFBA1405PPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.0mΩ S Benefits l l l l l l ID = 174A† Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
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