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IRFBA1405 - Power MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO247 package. The combination of extremely low on-resistance silicon an.

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PD -94111 AUTOMOTIVE MOSFET Typical Applications q q q q q q q q q q q IRFBA1405P HEXFET® Power MOSFET D Benefits Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 5.0mΩ S ID = 174A† Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.
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