IRFBA1404PPBF
Description
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche
- The result is significantly increased current handling capability over both the TO-220 and the much larger TO-247 package
- These benefits make this design an extremely efficient and reliable device for use in a wide variety of applications
- RDS(on) = 3.7mΩ ID = 206A S Super-220
