IRFF210 - TRANSISTORS

International Rectifier (now Infineon)

Datasheet Details

Part number	IRFF210
Manufacturer	International Rectifier (now Infineon)
File Size	181.89 KB
Description	TRANSISTORS
Datasheet	IRFF210 Datasheet

Overview

PD-90424D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF210 200V 1.5Ω ID 2.25A IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance.

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

Key Features

n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avala.

📁 Similar Datasheet

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