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International Rectifier Electronic Components Datasheet

IRFF210 Datasheet

TRANSISTORS

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PD-90424D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF210
200V 1.5
ID
2.25A
IRFF210
JANTX2N6784
JANTXV2N6784
REF:MIL-PRF-19500/556
200V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Units
2.25
1.50
A
9.0
15 W
0.12
W/°C
±20 V
48 mJ
2.25
A
1.5 mJ
5.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
www.irf.com
1
06/03/15


International Rectifier Electronic Components Datasheet

IRFF210 Datasheet

TRANSISTORS

No Preview Available !

IRFF210, JANTX2N6784
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 — —
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.25 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 1.5
— — 1.725
VGS = 10V, ID = 1.50A Ã
VGS =10V, ID = 2.25A Ã
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V
VDS = VGS, ID = 250µA
gfs Forward Transconductance
0.9 — —
S
VDS = 15V, IDS = 1.50A Ã
IDSS
Zero Gate Voltage Drain Current
— — 25
VDS = 160V, VGS = 0V
— — 250 µA
VDS = 160V
IGSS
Gate-to-Source Leakage Forward
— — 100
VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
— — -100 nA
VGS = -20V
Qg Total Gate Charge
— — 6.2
VGS =10V, ID = 2.25A
Qgs Gate-to-Source Charge
— — 1.2 nC
VDS = 100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 5.0
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 15
— — 20
— — 30 ns
VDD = 100V, ID = 2.25A,
VGS =10V, RG = 7.5
tf Fall Time
— — 20
LS + LD
Total Inductance
— 7.0 — nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
— 140
— 55 —
— 8.6 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 2.25 A
ISM Pulse Source Current (Body Diode) À
— — 9.0
VSD Diode Forward Voltage
— — 1.5 V
Tj = 25°C, IS = 2.25A, VGS = 0V Ã
trr Reverse Recovery Time
— — 350 ns Tj = 25°C, IF = 2.25A, di/dt 100A/µs
QRR Reverse Recovery Charge
— — 3.0 µC
VDD 50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
— — 8.3
— — 175
Units
°C/W
Test Conditions
Typical socket mount.
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com


Part Number IRFF210
Description TRANSISTORS
Maker International Rectifier
Total Page 7 Pages
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