IRFF210 Description
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance bined with high transconductance. The HEXFET transistors also.
- Part: IRFF210
- Manufacturer: International Rectifier
- Size: 181.89 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Intersil |
IRFF210 | N-Channel Power MOSFET |
GE |
IRFF210 | FIELD EFFECT POWER TRANSISTOR |