IRFG6110 Datasheet | International Rectifier

.. - 90436F POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, bination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY ® ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance bined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. MO-036AB Features : n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating...