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PD -97450 www.DataSheet4U.com
IRFH5004PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 2.6 73 1.2 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
• • • •
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits
Features and Benefits
Features
Low RDSon (≤ 2.6mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.