IRFH5204PbF Datasheet | International Rectifier

Features and Benefits Features Benefits Low RDSon (< 4.3 mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH5204TRPb F IRFH5204TR2Pb F Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ± 20 22 18 100 100 400 3.6 105 Units V g g c h h W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g 0.029 -55 to + 150 Notes  through † are on page 8 1 .irf. © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFH5204Pb F Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge...