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IRFH5206PBF - HEXFET Power MOSFET

Key Features

  • Features Low RDSon (≤ 7.0mΩ at Vgs=10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliabili.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -97466 www.DataSheet4U.com IRFH5206PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 6.7 40 1.7 89 V m : Qg (typical) RG (typical) ID nC : A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features and Benefits Features Low RDSon (≤ 7.0mΩ at Vgs=10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.