IRFH5210PBF Overview
IRFH5210PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 100 14.9 39 1.8 55 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor patibility Easier...