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IRFH5210PBF - HEXFET Power MOSFET

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Features

  • Features Low RDSon (≤ 14.9mΩ at Vgs = 10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH5210TRPBF IRFH5210TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 1000 Tape and Reel Note Absolute Maximum Ratings VD.

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PD - 97490 www.DataSheet4U.com IRFH5210PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 100 14.9 39 1.8 55 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Features and Benefits Features Low RDSon (≤ 14.9mΩ at Vgs = 10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.
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