IRFH5255PbF Datasheet | International Rectifier

Features and Benefits Features Benefits Low Charge (typical 7n C) Low Rg (typical 0.6Ω) Low Thermal Resistance to PCB (<4.9°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Switching Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5255TRPb F IRFH5255TR2Pb F Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 25 ± 20 15 12 51 33 60 3.6 26 0.029 -55 to + 150 Units A g Power Dissipation g Power Dissipation c W W/°C °C Linear Derating Factor Operating Junction and g Storage Temperature Range Notes  through … are on page 8 1 .irf. © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 http://.. IRFH5255Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge...