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International Rectifier Electronic Components Datasheet

IRFH5255PbF Datasheet

Power MOSFET

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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
25 V
6.0 mΩ
7.0 nC
0.6 Ω
51 A
Applications
Control MOSFET for high Frequency Buck Converters
IRFH5255PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Features
Low Charge (typical 7nC)
Low Rg (typical 0.6Ω)
Low Thermal Resistance to PCB (<4.9°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5255TRPbF
IRFH5255TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25 °C
ID @ TC(Bottom) = 10 0°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
25
± 20
15
12
51
33
60
3.6
26
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through … are on page 8
1 www.irf.com © 2013 International Rectifier
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December 16, 2013
http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFH5255PbF Datasheet

Power MOSFET

No Preview Available !

IRFH5255PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
5.0
8.8
1.80
-6.3
–––
–––
–––
–––
–––
14.5
7.0
1.6
1.2
2.7
1.5
3.8
6.0
0.6
7.9
10.7
6.5
3.8
988
289
127
Max.
–––
–––
6.0
10.9
2.35
–––
5
150
100
-100
–––
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
V/°C
mΩ
Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 15A
eVGS = 4.5V, ID = 15A
V
mV/°C
VDS = VGS, ID = 25μA
μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 13V, ID = 15A
nC VGS = 10V, VDS = 13V, ID = 15A
VDS = 13V
nC
VGS = 4.5V
ID = 15A
See Fig.17 & 18
nC VDS = 16V, VGS = 0V
Ω
VDD = 13V, VGS = 4.5V
ns
ID = 15A
RG=1.0Ω
See Fig.15
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Typ.
–––
–––
Max.
53
15
Units
mJ
A
Min. Typ. Max. Units
Conditions
––– ––– 51
––– ––– 60
––– ––– 1.0
––– 11 17
––– 7.8 12
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 15A, VGS = 0V
ns TJ = 25°C, IF = 15A, VDD = 13V
nC di/dt = 300A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fParameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
4.9
15
35
22
Units
°C/W
2 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013


Part Number IRFH5255PbF
Description Power MOSFET
Maker International Rectifier
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International Rectifier





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