IRFH5250PBF Datasheet | International Rectifier

PD -96265 .. HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 25 1.15 52 1.3 100 V m : PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) nC h : Applications - OR-ing MOSFET for 12V (typical) Bus in-Rush Current - Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<1.15 mΩ) Low Thermal Resistance to PCB (<0.5°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enable better thermal dissipation Increased Reliability...