IRFH5255PbF Datasheet | International Rectifier

HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 25 6.0 7.0 0.6 51 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications - Control MOSFET for high Frequency Buck Converters Features and Benefits Features Benefits Low Charge (typical 7nC) Low Rg (typical 0.6Ω) Low Thermal Resistance to PCB (<4.9°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Switching Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒...