IRFH5250DPBF Datasheet | International Rectifier

V DS RDS(on) max (@V GS = 10V) 25 1.4 0.6 27 100 V mΩ V ns A HEXFET® Power MOSFET V SD max (@I S = 5.0A) trr (typical) ID (@Tmb = 25°C) h PQFN 5X6 mm Applications - Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low RDSon (<1.4mΩ) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Lower Switching Losses Enable better thermal dissipation Increased...