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International Rectifier Electronic Components Datasheet

IRFH5302PBF Datasheet

HEXFET Power MOSFET

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www.DatPaSDhee-t94U7.1co5m6
IRFH5302PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
2.1
29
1.6
h100
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Synchronous MOSFET for buck converters
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low RDSon (2.1mΩ)
Low Thermal Resistance to PCB (1.2°C/W)
100% Rg tested
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5302TRPBF
IRFH5302TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
www.irf.com
Max.
30
± 20
32
26
100
100
h
h
400
3.6
100
0.029
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
10/20/09


International Rectifier Electronic Components Datasheet

IRFH5302PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5302PbF
www.DataSheet4U.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30 –––
––– 0.02
––– 1.8
––– 2.8
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35 1.8
––– -6.8
––– –––
––– –––
IGSS
Gate-to-Source Forward Leakage
––– –––
Gate-to-Source Reverse Leakage
––– –––
gfs Forward Transconductance
180 –––
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 76
––– 29
––– 7.7
––– 4.4
––– 9.7
––– 8.2
––– 14
––– 19
––– 1.6
––– 18
––– 51
––– 22
––– 18
––– 4400
––– 890
––– 360
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
e2.1
e3.5
mΩ
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
2.35
–––
V
mV/°C
VDS
=
VGS,
ID
=
100µA
5.0
150
100
-100
–––
–––
41
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 50A
nC VGS = 10V, VDS = 15V, ID = 50A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 50A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
2.5 Ω
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 50A
RG=1.8Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
130
50
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
h––– ––– 100
MOSFET symbol
A showing the
integral reverse
G
––– ––– 400
––– ––– 1.0
ep-n junction diode.
V TJ = 25°C, IS = 50A, VGS = 0V
––– 20 30 ns TJ = 25°C, IF = 50A, VDD = 15V
––– 32 48 nC di/dt = 300A/µs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
Max.
Units
––– 1.2
––– 15 °C/W
––– 35
––– 22
www.irf.com


Part Number IRFH5302PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH5302PBF Datasheet PDF






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