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International Rectifier Electronic Components Datasheet

IRFH7085PBF Datasheet

Power MOSFET

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Application
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC converters
DC/AC Inverters
 
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant 
StrongIRFET™
IRFH7085PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
ID (Package Limited)
60V
2.6m
3.2m
147A
100A
  
PQFN 5X6 mm
Base part number
Package Type
  
IRFH7085PbF
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7085TRPbF
8.0
ID = 75A
7.0
6.0
5.0 TJ = 125°C
4.0
3.0 TJ = 25°C
2.0
4
6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
150
125
100
75
50
25
0
25
Limited By Package
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2015 International Rectifier
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March 17, 2015


International Rectifier Electronic Components Datasheet

IRFH7085PBF Datasheet

Power MOSFET

No Preview Available !

  IRFH7085PbF
Absolute Maximum Rating
Symbol
Parameter
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @ TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Avalanche Characteristics 
Symbol
Parameter
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
Thermal Resistance
Single Pulse Avalanche Energy 
Single Pulse Avalanche Energy 
Avalanche Current
Repetitive Avalanche Energy
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Max.
23
147
93
100
590
156
1.25
± 20
-55 to + 150 
Units
A 
A 
W
W/°C
V
°C  
Max.
319
554
See Fig 15, 16, 23a, 23b  
Units
mJ
A
mJ
Typ.
0.5
–––
–––
–––
Max.
0.8
20
34
22
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
43
2.6
3.6
–––
–––
–––
–––
–––
1.4
Max.
–––
–––
3.2
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 75A
VGS = 6.0V, ID = 38A
V VDS = VGS, ID = 150µA
µA
VDS = 60V, VGS = 0V
VDS = 60V,VGS = 0V,TJ = 125°C
nA
VGS = 20V
VGS = -20V

Notes:
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by
production test capability.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 113µH, RG = 50, IAS = 75A, VGS = 10V.
ISD 75A, di/dt 1280A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 17, 2015


Part Number IRFH7085PBF
Description Power MOSFET
Maker International Rectifier
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