Datasheet4U Logo Datasheet4U.com

IRFH7084PbF - HEXFET Power MOSFET

Key Features

  • che pulsewidth, tav, assuming  j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width 200 180 EAR , Avalanche Energy (mJ) 160 140 120 100 80 60 40 20 0 25 50 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www. irf. com © 2013 International Rectifier Notes on Repetitive Avalanche Curves , Fig.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFH7184PbF Power MOSFET Infineon
IRFH7440PbF Power MOSFET Infineon
IRFH4201 Power MOSFET Infineon
IRFH4201PbF Power MOSFET Infineon
IRFH8201PbF MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFH7084TRPbF HEXFET Power MOSFET
IRFH7085PBF Power MOSFET
IRFH7004PBF HEXFET Power MOSFET
IRFH7004TRPBF HEXFET Power MOSFET
IRFH7107PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
StrongIRFET™ IRFH7084PbF Application  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  DC/DC converters  DC/AC Inverters HEXFET® Power MOSFET VDSS RDS(on) typ. max 40V 0.95m 1.