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International Rectifier Electronic Components Datasheet

IRFH7110PBF Datasheet

HEXFET Power MOSFET

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IRFH7110PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
QG (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
100
± 20
13.5
58
0.6
50i
V
V
mΩ
nC
Ω
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (< 13.5mW)
Low Thermal Resistance to PCB (< 1.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH7110TRPBF
IRFH7110TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
100
± 20
11
8.6
58hi
37h
50i
240
3.6
104
0.029
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 13, 2014


International Rectifier Electronic Components Datasheet

IRFH7110PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH7110PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
100
–––
–––
2.0
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
74
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
Typ.
–––
0.09
10.6
3.0
-9.0
–––
–––
–––
–––
–––
58
11
3.6
16
27.4
19.6
17
0.6
11
23
22
18
3240
300
140
Max.
–––
–––
13.5
4.0
–––
20
250
100
-100
–––
87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
eV/°C Reference to 25°C, ID = 1.0mA
mΩ VGS = 10V, ID = 35A
V
mV/°C
VDS
=
VGS,
ID
=
100μA
μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 35A
VDS = 50V
nC
VGS = 10V
ID = 35A
nC VDS = 16V, VGS = 0V
Ω
VDD = 50V, VGS = 10V
ns
ID = 35A
RG=1.8Ω
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
110
35
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 50
––– –––
––– –––
––– 27
––– 140
240
1.3
41
210
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
eV TJ = 25°C, IS = 35A, VGS = 0V
ns TJ = 25°C, IF = 35A, VDD = 50V
nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
fgJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.2
32
35
22
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014


Part Number IRFH7110PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH7110PBF Datasheet PDF






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International Rectifier





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