Download IRFH7185PBF Datasheet PDF
International Rectifier
IRFH7185PBF
IRFH7185PBF is Power MOSFET manufactured by International Rectifier.
Features Low RDS(ON) (< 5.2m) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (<1.05 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1 Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density  Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number Package Type   IRFH7185Pb F   PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFH7185TRPb F Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range   Max. ± 20 19 123 78 260 3.6 160 0.03 -55 to + 150   Units V W/°C °C Notes  through  are on page 9 1 .irf. © 2015 International Rectifier Submit Datasheet Feedback March 17, 2015   IRFH7185Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage VGS(th) Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage...