IRFH7185PBF
IRFH7185PBF is Power MOSFET manufactured by International Rectifier.
Features
Low RDS(ON) (< 5.2m) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (<1.05 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1
Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
Package Type
IRFH7185Pb F
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
Orderable Part Number IRFH7185TRPb F
Absolute Maximum Ratings
Parameter
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range
Max. ± 20
19 123 78 260 3.6 160 0.03 -55 to + 150
Units V
W/°C °C
Notes through are on page 9 1 .irf. © 2015 International Rectifier
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March 17, 2015
IRFH7185Pb F
Static @ TJ = 25°C (unless otherwise specified) Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)
Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage...