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International Rectifier Electronic Components Datasheet

IRFH7911PBF Datasheet

HEXFET Power MOSFET

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PD - 97427D
IRFH7911PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
Q1
30
8.6
8.3
13
Q2
30 V
3.0 m:
34 nC
28 A
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6' 6 


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Dual PQFN 5X6 mm
Applications
Control and synchronous MOSFET for buck converters
Features and Benefits
Features
Control and synchronous FET in one package
Low charge control MOSFET (8.3 nC typical)
Low RDSon synchronous MOSFET (< 3.0 mΩ)
100% Rg tested
Low Profile (0.9 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL2, Consumer Qualification
Benefits
Increased power density
(50% vs two PQFN 5x6)
Lower switching losses
results in Lower conduction losses
Increased reliability
Increased power density
Easier manufacturing
Environmentally Friendlier
Increased reliability
Orderable part num ber
Package Type
I RFH79 11 TR PB F
PQFN 5mm x 6mm
I RFH79 11 TR 2P BF
PQFN 5mm x 6mm
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Standard Pack
Form
Qua ntity
Tape and Reel
4 00 0
Tape and Reel
40 0
Q1 Max.
Q2 Max.
30
± 20
13 28
10 23
100 230
2.4 3.4
1.5 2.2
0.019
0.027
-55 to + 150
Note
Units
V
A
W
W/°C
°C
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
fJunction-to-Case
gJunction-to-Ambient
Q1 Max.
7.7
53
Q2 Max.
2.5
Units
°C/W
37
1
Free Datasheet http://www07.d/1a1ta/1sh2eet4u.com/


International Rectifier Electronic Components Datasheet

IRFH7911PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH7911PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
IGSS
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Q1&Q2
Q1
Q2
Q1
Q2
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
17
106
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.021
0.022
7.2
11.1
2.4
3.4
–––
-6.8
-6.4
–––
–––
–––
–––
–––
–––
8.3
34
2.0
7.9
1.0
3.6
3.2
11
2.1
12
4.2
15
5.0
19
1.8
0.7
12
22
15
35
12
28
5.9
14
1060
4450
230
850
110
440
Max.
–––
–––
–––
8.6
14.5
3.0
4.0
2.35
–––
–––
1.0
150
100
-100
–––
–––
12
51
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 12A
emΩ VGS = 4.5V, ID = 10A
eVGS = 10V, ID = 26A
eVGS = 4.5V, ID = 21A
V Q1: VDS = VGS, ID = 25μA
mV/°C Q2: VDS = VGS, ID = 100μA
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 10A
VDS = 15V, ID = 21A
Q1
VDS = 15V
nC VGS = 4.5V, ID = 10A
Q2
VDS = 15V
VGS = 4.5V, ID = 21A
nC VDS = 16V, VGS = 0V
Ω
Q1
VDD = 15V, VGS = 4.5V
ID = 10A
ns RG=1.8Ω
Q2
VDD = 15V, VGS = 4.5V
ID = 21A
RG=1.8Ω
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Typ.
–––
–––
Q1 Max.
12
10
Q2 Max.
32
21
Units
mJ
A
Min. Typ. Max. Units
Conditions
Q1 ––– ––– 3.0 A MOSFET symbol
Q2 ––– ––– 3.0
showing the
Q1 ––– ––– 100 A integral reverse
Q2 ––– ––– 230
p-n junction diode.
eQ1 ––– ––– 1.0 V TJ = 25°C, IS = 10A, VGS = 0V
eQ2 ––– ––– 1.0
TJ = 25°C, IS = 21A, VGS = 0V
eQ1 ––– 13 20 ns Q1 TJ = 25°C, IF = 10A,
Q2 ––– 20 29
VDD = 15V, di/dt = 300A/μs
eQ1 ––– 13 20 nC Q2 TJ = 25°C, IF = 21A,
Q2 ––– 24 36
VDD = 15V, di/dt = 280A/μs
www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number IRFH7911PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH7911PBF Datasheet PDF





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International Rectifier





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