IRFH7923PBF Datasheet | International Rectifier

.. - 96139 IRFH7923Pb F Applications l HEXFET® Power MOSFET l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & puting Systems Optimized for Control FET Applications VDSS 30V RDS(on) max Qg 8.7m @VGS = 10V 8.7n C : Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) Ro HS pliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering PQFN Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 15 12 33 120 3.0 Units V g Power Dissipation g Power Dissipation c A W W/°C °C Linear Derating Factor Operating Junction and g 1.9 0.02 -55 to + 150 Storage Temperature Range Thermal Resistance Parameter RθJC RθJA Junction-to-Case f Typ. - - - - - - Max. 8.3 42 Units °C/W Junction-to-Ambient g Notes  through … are on page...