IRFH7911PBF Datasheet | International Rectifier

Features and Benefits Features Control and synchronous FET in one package Low charge control MOSFET (8.3 n C typical) Low RDSon synchronous MOSFET (< 3.0 mΩ) 100% Rg tested Low Profile (≤ 0.9 mm) patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL2, Consumer Qualification Orderable part num ber IRFH7911TRPBF IRFH7911TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Increased power density (50% vs two PQFN 5x6) Lower switching losses results in Lower conduction losses ⇒ Increased reliability Increased power density Easier manufacturing Environmentally Friendlier Increased reliability Note Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 13 10 100 2.4 1.5 0.019 -55 to + 150 Q1 Max. 30 ± 20 Q2 Max. Units 28 23 230 3.4 2.2 0.027 W/°C °C W A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and g Storage Temperature Range Thermal Resistance RθJC Junction-to-Case .irf. RθJA Junction-to-Ambient f Parameter Q1 Max. 7.7 53 Q2 Max. 2.5 37 g Units °C/W 07/11/12 Free Datasheet http://../ IRFH7911Pb F Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge...