IRFH7914PBF Datasheet | International Rectifier

IRFH7914Pb F Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg 8.7mΩ@VGS = 10V 8.3n C Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l Ro HS pliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for more reliable Soldering PQFN 5X6 mm Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current g Power Dissipation g Power Dissipation g Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter f RθJC g RθJA Junction-to-Case Junction-to-Ambient Notes  through … are on page 9 Max. 30 ± 20 15 12 35 110 3.1 2.0 0.025 -55 to + 150 Units V A W W/°C °C Typ. - - - - - - Max. 7.2 40 Units °C/W 1 .irf. © 2013 International Rectifier August 16, 2013 IRFH7914Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter...