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International Rectifier Electronic Components Datasheet

IRFH7921PBF Datasheet

Power MOSFET

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PD - 97335
IRFH7921PbF
Applications
l High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
l Optimized for Control FET Applications
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
8.5m@VGS = 10V 9.3nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
D
D
D
D
PQFN
S
S
S
G
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Max.
30
± 20
15
12
34
120
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
7.9
40
Units
°C/W
1
07/15/08


International Rectifier Electronic Components Datasheet

IRFH7921PBF Datasheet

Power MOSFET

No Preview Available !

www.DataSheet4U.com
IRFH7921PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
–––
–––
–––
1.35
–––
–––
0.02
7.1
10.4
1.8
-6.2
–––
–––
8.5
12.5
2.35
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
V
mV/°C VDS = VGS, ID = 25µA
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
27 ––– –––
––– 9.3 14
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.2 –––
VDS = 15V
–––
–––
1.2
3.2
–––
–––
nC
VGS = 4.5V
ID = 12A
––– 2.7 –––
See Fig.17 & 18
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.4 –––
Qoss
Output Charge
––– 5.0 ––– nC VDS = 16V, VGS = 0V
RG
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 1.4 2.4
––– 12 –––
VDD = 15V, VGS = 4.5V
–––
–––
7.6
14
–––
–––
ns
ID = 12A
RG=1.8
––– 4.7 –––
See Fig.15
Ciss Input Capacitance
––– 1210 –––
VGS = 0V
Coss Output Capacitance
––– 240 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
29
12
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 3.9
––– ––– 120
––– ––– 1.0
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
––– 12 18 ns TJ = 25°C, IF = 12A, VDD = 15V
––– 11 17 nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number IRFH7921PBF
Description Power MOSFET
Maker International Rectifier
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