IRFH7932PBF Datasheet | International Rectifier

Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l Ro HS pliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for more reliable Soldering VDSS 30V IRFH7932Pb F HEXFET® Power MOSFET RDS(on) max Qg :3.3m @VGS = 10V 34n C PQFN Orderable part number IRFH7932TRPb F IRFH7932TR2Pb F Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel Tape and Reel Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current g Power Dissipation g Power Dissipation g Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter f RθJC Junction-to-Case g RθJA Junction-to-Ambient Max. 30 ± 20 25 20 104 200 3.4...