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International Rectifier Electronic Components Datasheet

IRFH7932PBF Datasheet

Power MOSFET

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Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
VDSS
30V
IRFH7932PbF
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.3m @VGS = 10V 34nC
D
D
D
D
PQFN
S
S
S
G
Orderable part number
IRFH7932TRPbF
IRFH7932TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
gRθJA Junction-to-Ambient
Max.
30
± 20
25
20
104
200
3.4
2.2
0.03
-55 to + 150
Typ.
–––
–––
Max.
2.2
37
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 10
1 www.irf.com © 2014 International Rectifier
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August 11, 2014


International Rectifier Electronic Components Datasheet

IRFH7932PBF Datasheet

Power MOSFET

No Preview Available !

IRFH7932PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
–––
–––
–––
1.35
–––
–––
0.021
2.5
3.3
1.8
-5.9
–––
–––
3.3
3.9
2.35
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
V
mV/°C
VDS
=
VGS,
ID
=
100µA
IDSS
Drain-to-Source Leakage Current
–––
–––
––– 1.0
––– 150
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
59 ––– –––
––– 34 51
S VDS = 15V, ID = 20A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 7.9 –––
VDS = 15V
–––
–––
3.6
11
–––
–––
nC
VGS = 4.5V
ID = 20A
––– 12 –––
See Fig.17 & 18
Qsw Switch Charge (Qgs2 + Qgd)
––– 15 –––
Qoss Output Charge
––– 19 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
––– 0.7 –––
––– 20 –––
VDD = 15V, VGS = 4.5V
–––
–––
48
23
–––
–––
ns
ID = 20A
RG=1.8
––– 20 –––
See Fig.15
Ciss Input Capacitance
––– 4270 –––
VGS = 0V
Coss Output Capacitance
––– 830 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 420 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
16
20
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 4.2
––– ––– 200
––– ––– 1.0
––– 21 32
––– 33 50
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 300A/µs See Fig.16
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 11, 2014


Part Number IRFH7932PBF
Description Power MOSFET
Maker International Rectifier
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International Rectifier





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