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IRFH7936PBF - Power MOSFET

Key Features

  • ARKING (LASER) Note: For the most current drawing please refer to IR website at http://www. irf. com/package/ 8 www. irf. com © 2013 International Rectifier August 16, 2013 PQFN Tape and Reel IRFH7936PbF Note: For the most current drawing please refer to IR website at http://www. irf. com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.22mH, RG = 25Ω, IAS = 16A.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%.
  • Rthjc is guar.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFH7936PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg 4.8mΩ@VGS = 10V 17nC Benefits l Very low RDS(ON) at 4.