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International Rectifier Electronic Components Datasheet

IRFH8201PBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
0.95
1.60
56
100
V
m
nC
A
 
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
StrongIRFET™
IRFH8201PbF
HEXFET® Power MOSFET
 
PQFN 5X6 mm
Features
Low RDSon (<0.95m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number  
IRFH8201PbF
Package Type  
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8201TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC (Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
49
324
205
100
700
3.6
156
0.029
-55 to + 150
 
Units
V
A 
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 11, 2015


International Rectifier Electronic Components Datasheet

IRFH8201PBF Datasheet

Power MOSFET

No Preview Available !

  IRFH8201PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
20
0.80
1.20
1.80
-6.1
–––
–––
–––
–––
–––
111
56
16
7.0
18
15
25
39
1.1
27
54
31
22
7330
1730
850
 
    
Max.
–––
–––
0.95
1.60
2.35
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
V
mV/°C
VDS = VGS, ID = 150µA
1.0
150
100
-100
–––
–––
µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ=125°C
nA
VGS = 20V
VGS = -20V
S VDS = 10V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
84
–––  
––– nC
–––  
–––  
–––  
––– nC
–––  
–––
––– ns
–––  
–––  
–––
––– pF
–––  
VDS = 13V
VGS = 4.5V
ID = 50A
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 50A
RG=4.7
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
    
Typ.
–––
 
Max.
437 
  
 
Units
mJ
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
57
Max.
100
700
1.0
38
86
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 13V
nC di/dt = 400A/µs
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
2 www.irf.com © 2015 International Rectifier
 
Typ.
0.5
–––
–––
–––
 
Max.
0.8
21
35
20
 
Units
°C/W
Submit Datasheet Feedback
March 11, 2015


Part Number IRFH8201PBF
Description Power MOSFET
Maker International Rectifier
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IRFH8201PBF Datasheet PDF






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International Rectifier





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