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International Rectifier Electronic Components Datasheet

IRFH8303PBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
Qg (typical)
RG (typical)
ID
(@TC (Bottom) = 25°C)
30
1.10
58
1.0
100
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
 
StrongIRFET™
IRFH8303PbF
HEXFET® Power MOSFET
 
PQFN 5 x 6 mm
Features
Low RDS(ON) (1.10 m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Reliability
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
 
IRFH8303PbF
 
PQFN 5 mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8303TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
43
280
177
100
400
3.7
156
0.029
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 17, 2015


International Rectifier Electronic Components Datasheet

IRFH8303PBF Datasheet

Power MOSFET

No Preview Available !

  IRFH8303PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
158
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
21
0.90
1.30
1.7
-5.7
–––
–––
–––
–––
–––
119
58
14
8
19
17
27
33
1.0
21
91
48
65
7736
1363
743
 
Typ.
–––
  
 
Max. Units
Conditions
–––
–––
1.10
1.70
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1.0mA
m
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
2.2 V VDS = VGS, ID = 150µA
––– mV/°C
1.0
150
100
-100
–––
179
87
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20 V
VGS = -20 V
S VDS = 15 V, ID = 50A
VGS = 10V, VDS = 15V, ID = 50A
–––  
––– nC
–––  
–––  
–––  
VDS = 15V
VGS = 4.5V
ID = 50A
––– nC
–––  
–––
––– ns
–––  
–––  
VDS = 16V, VGS = 0V
VDD = 30V, VGS = 4.5V
ID = 50A
RG = 1.8
–––
––– pF
–––  
VGS = 0V
VDS = 24V
ƒ = 1.0MHz
    
Max.
Units
355 mJ
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
33
51
  
 
Max. Units
Conditions
100A MOSFET symbol
D
showing the
400
integral reverse
G
p-n junction diode.
S
1.0 V TJ = 25°C, IS=50A, VGS=0V
50 ns TJ = 25°C, IF = 50A, VDD = 15V
77 nC di/dt = 200A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
0.8
21
34
21
 
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 17, 2015


Part Number IRFH8303PBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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