IRFH8311PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ ΒVDSS/∆ TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
V GS(t h)
∆ VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
83
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
–––
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
tr
td(off )
tf
Ciss
Coss
Crss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
Typ.
–––
0.021
1.70
2.60
1.8
-6.6
–––
–––
–––
–––
–––
66
30
9.7
3.9
8.6
7.8
12.5
21
0.6
21
26
21
12
4960
1065
455
Max.
–––
–––
2.10
3.20
2.35
–––
1
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C
mΩ
V
Reference to 25°C, ID = 1.0mA
eVGS = 10V, ID = 20A
eVGS = 4.5V, ID = 16A
VDS = VGS, ID = 100µA
mV/°C
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
VDS = 15V
nC VGS = 4.5V
ID = 20A
nC VDS = 16V, VGS = 0V
Ω
VDD = 15V, VGS = 4.5V
ns ID = 20A
RG=1.8Ω
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
326
20
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 80
––– ––– 400
––– –––
––– 22
––– 47
1.0
33
71
MOSFET symbol
D
A showing the
integral reverse
G
S
p-n junction diode.
eV TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
eÃnC di/dt = 390 A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Parameter
Typ.
–––
–––
–––
–––
Max.
1.3
30
35
0.99
Units
°C/W
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January 7, 2014
