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IRFH8337PbF
HEXFET® Power MOSFET
VDS VGS
max
30 ± 20 12.8 19.9 4.7 16.2
V V mΩ nC A
PQFN 5X6 mm
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 25°C)
i
Applications
• Control MOSFET for high frequency buck converters
Features and Benefits
Features Low Thermal Resistance to PCB (< 4.7°C/W) Low Profile (<1.
IRFH8337PBF Datasheet
